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$5 USD / hour
Flag of PAKISTAN
lahore, pakistan
$5 USD / hour
It's currently 10:59 PM here
Joined February 24, 2017
1 Recommendation

Ahmad F.

@faizanrajpoot

 5.0 (3 reviews)
1.6
1.6
100%
100%
$5 USD / hour
Flag of PAKISTAN
lahore, pakistan
$5 USD / hour
100%
Jobs Completed
100%
On Budget
100%
On Time
13%
Repeat Hire Rate

Electrical Engineer | Help others in Free Time

I am an Electrical Engineering seeking opportunities that challenges my abilities and passion in the field of Embedded System Design, Industrial Automation and Information Technology. Other than my expertise in Electrical Engineering and Industrial Automation, I also know database query language like SQL scripting language like Python and other programming language like C, C++ and C#. My Area of Expertise are : • Industrial Automation (PLC, SCADA) • Embedded System Design (Linux,RTOS) • Microcontroller Interfacing and Programming (Atmel,AVR,PIC,ARM) • Computer Programming (OOP) • Computer Networks • Power Electronics • Electric Power Systems (Motors, Transformers, Switchgears) • Communication Systems (Analog, Digital) • Electronic Design Automation (Proteus,EAGLE,Altium) • Engineering Economics & Management • Technical Report Writing & Communication Skills
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Portfolio

3295104
Modified the Three LED's to Single LED in order to reduce power consumption to prolong battery!
BLE Node PCB Layout
Modified the Three LED's to Single LED in order to reduce power consumption to prolong battery!
BLE Node PCB Layout
3286094
Class-E power amplifiers achieve significantly higher efficiency than conventional Class-B or –C amplifiers. In Class-E, the transistor operates as an on/off switch and the load network shapes the voltage and current waveform to prevent simultaneous high voltage and high current in the transistor; that minimizes power dissipation, especially during the switching transitions. This is a design of a Low power (20W) Class E amplifier using IRF 530 MOSFET with a switching Frequency of about (3.6MHz) which is given by V_pulse at the gate of MOSFET, A DC Supply of (12V) is given at the Drain Side of MOSFET from which the sinusoidal signal is generated with the LC resonant circuit connected across the drain, while source of MOSFET is simply connected to Ground! The simulated magnitude response is about (20dB) at the desired (3.6MHz) frequency which proves about design is correct and should work just fine.
Class-E based RF Power Amplifier Design
Class-E power amplifiers achieve significantly higher efficiency than conventional Class-B or –C amplifiers. In Class-E, the transistor operates as an on/off switch and the load network shapes the voltage and current waveform to prevent simultaneous high voltage and high current in the transistor; that minimizes power dissipation, especially during the switching transitions. This is a design of a Low power (20W) Class E amplifier using IRF 530 MOSFET with a switching Frequency of about (3.6MHz) which is given by V_pulse at the gate of MOSFET, A DC Supply of (12V) is given at the Drain Side of MOSFET from which the sinusoidal signal is generated with the LC resonant circuit connected across the drain, while source of MOSFET is simply connected to Ground! The simulated magnitude response is about (20dB) at the desired (3.6MHz) frequency which proves about design is correct and should work just fine.
Class-E based RF Power Amplifier Design
Class-E power amplifiers achieve significantly higher efficiency than conventional Class-B or –C amplifiers. In Class-E, the transistor operates as an on/off switch and the load network shapes the voltage and current waveform to prevent simultaneous high voltage and high current in the transistor; that minimizes power dissipation, especially during the switching transitions. This is a design of a Low power (20W) Class E amplifier using IRF 530 MOSFET with a switching Frequency of about (3.6MHz) which is given by V_pulse at the gate of MOSFET, A DC Supply of (12V) is given at the Drain Side of MOSFET from which the sinusoidal signal is generated with the LC resonant circuit connected across the drain, while source of MOSFET is simply connected to Ground! The simulated magnitude response is about (20dB) at the desired (3.6MHz) frequency which proves about design is correct and should work just fine.
Class-E based RF Power Amplifier Design
Class-E power amplifiers achieve significantly higher efficiency than conventional Class-B or –C amplifiers. In Class-E, the transistor operates as an on/off switch and the load network shapes the voltage and current waveform to prevent simultaneous high voltage and high current in the transistor; that minimizes power dissipation, especially during the switching transitions. This is a design of a Low power (20W) Class E amplifier using IRF 530 MOSFET with a switching Frequency of about (3.6MHz) which is given by V_pulse at the gate of MOSFET, A DC Supply of (12V) is given at the Drain Side of MOSFET from which the sinusoidal signal is generated with the LC resonant circuit connected across the drain, while source of MOSFET is simply connected to Ground! The simulated magnitude response is about (20dB) at the desired (3.6MHz) frequency which proves about design is correct and should work just fine.
Class-E based RF Power Amplifier Design
3286079
OOP based Shopping Management System
OOP based Shopping Management System
OOP based Shopping Management System
OOP based Shopping Management System
OOP based Shopping Management System
OOP based Shopping Management System
OOP based Shopping Management System
OOP based Shopping Management System
OOP based Shopping Management System
OOP based Shopping Management System
OOP based Shopping Management System
OOP based Shopping Management System
OOP based Shopping Management System
OOP based Shopping Management System
OOP based Shopping Management System
3286071
Shopping Management System (C++)
Shopping Management System (C++)
Shopping Management System (C++)
Shopping Management System (C++)
Shopping Management System (C++)
3286065
Here is the Transition Table derivation from given Regular Expression and Transition Diagram for a Compiler Design.
Making of Transition Table of a Compiler
3286053
I have also complete many MATLAB Projects related to Digital Signal Processing,Image Processing,Fuzzy Logic,etc Here is the glimpse of some of the projects that I did!
MATLAB Programming
I have also complete many MATLAB Projects related to Digital Signal Processing,Image Processing,Fuzzy Logic,etc Here is the glimpse of some of the projects that I did!
MATLAB Programming
I have also complete many MATLAB Projects related to Digital Signal Processing,Image Processing,Fuzzy Logic,etc Here is the glimpse of some of the projects that I did!
MATLAB Programming
3295104
Modified the Three LED's to Single LED in order to reduce power consumption to prolong battery!
BLE Node PCB Layout
Modified the Three LED's to Single LED in order to reduce power consumption to prolong battery!
BLE Node PCB Layout
3286094
Class-E power amplifiers achieve significantly higher efficiency than conventional Class-B or –C amplifiers. In Class-E, the transistor operates as an on/off switch and the load network shapes the voltage and current waveform to prevent simultaneous high voltage and high current in the transistor; that minimizes power dissipation, especially during the switching transitions. This is a design of a Low power (20W) Class E amplifier using IRF 530 MOSFET with a switching Frequency of about (3.6MHz) which is given by V_pulse at the gate of MOSFET, A DC Supply of (12V) is given at the Drain Side of MOSFET from which the sinusoidal signal is generated with the LC resonant circuit connected across the drain, while source of MOSFET is simply connected to Ground! The simulated magnitude response is about (20dB) at the desired (3.6MHz) frequency which proves about design is correct and should work just fine.
Class-E based RF Power Amplifier Design
Class-E power amplifiers achieve significantly higher efficiency than conventional Class-B or –C amplifiers. In Class-E, the transistor operates as an on/off switch and the load network shapes the voltage and current waveform to prevent simultaneous high voltage and high current in the transistor; that minimizes power dissipation, especially during the switching transitions. This is a design of a Low power (20W) Class E amplifier using IRF 530 MOSFET with a switching Frequency of about (3.6MHz) which is given by V_pulse at the gate of MOSFET, A DC Supply of (12V) is given at the Drain Side of MOSFET from which the sinusoidal signal is generated with the LC resonant circuit connected across the drain, while source of MOSFET is simply connected to Ground! The simulated magnitude response is about (20dB) at the desired (3.6MHz) frequency which proves about design is correct and should work just fine.
Class-E based RF Power Amplifier Design
Class-E power amplifiers achieve significantly higher efficiency than conventional Class-B or –C amplifiers. In Class-E, the transistor operates as an on/off switch and the load network shapes the voltage and current waveform to prevent simultaneous high voltage and high current in the transistor; that minimizes power dissipation, especially during the switching transitions. This is a design of a Low power (20W) Class E amplifier using IRF 530 MOSFET with a switching Frequency of about (3.6MHz) which is given by V_pulse at the gate of MOSFET, A DC Supply of (12V) is given at the Drain Side of MOSFET from which the sinusoidal signal is generated with the LC resonant circuit connected across the drain, while source of MOSFET is simply connected to Ground! The simulated magnitude response is about (20dB) at the desired (3.6MHz) frequency which proves about design is correct and should work just fine.
Class-E based RF Power Amplifier Design
Class-E power amplifiers achieve significantly higher efficiency than conventional Class-B or –C amplifiers. In Class-E, the transistor operates as an on/off switch and the load network shapes the voltage and current waveform to prevent simultaneous high voltage and high current in the transistor; that minimizes power dissipation, especially during the switching transitions. This is a design of a Low power (20W) Class E amplifier using IRF 530 MOSFET with a switching Frequency of about (3.6MHz) which is given by V_pulse at the gate of MOSFET, A DC Supply of (12V) is given at the Drain Side of MOSFET from which the sinusoidal signal is generated with the LC resonant circuit connected across the drain, while source of MOSFET is simply connected to Ground! The simulated magnitude response is about (20dB) at the desired (3.6MHz) frequency which proves about design is correct and should work just fine.
Class-E based RF Power Amplifier Design
3286079
OOP based Shopping Management System
OOP based Shopping Management System
OOP based Shopping Management System
OOP based Shopping Management System
OOP based Shopping Management System
OOP based Shopping Management System
OOP based Shopping Management System
OOP based Shopping Management System
OOP based Shopping Management System
OOP based Shopping Management System
OOP based Shopping Management System
OOP based Shopping Management System
OOP based Shopping Management System
OOP based Shopping Management System
OOP based Shopping Management System
3286071
Shopping Management System (C++)
Shopping Management System (C++)
Shopping Management System (C++)
Shopping Management System (C++)
Shopping Management System (C++)
3286065
Here is the Transition Table derivation from given Regular Expression and Transition Diagram for a Compiler Design.
Making of Transition Table of a Compiler
3286053
I have also complete many MATLAB Projects related to Digital Signal Processing,Image Processing,Fuzzy Logic,etc Here is the glimpse of some of the projects that I did!
MATLAB Programming
I have also complete many MATLAB Projects related to Digital Signal Processing,Image Processing,Fuzzy Logic,etc Here is the glimpse of some of the projects that I did!
MATLAB Programming
I have also complete many MATLAB Projects related to Digital Signal Processing,Image Processing,Fuzzy Logic,etc Here is the glimpse of some of the projects that I did!
MATLAB Programming

Reviews

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Showing 1 - 4 out of 4 reviews
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5.0
$0.05 USD
Maestro Servo Controller with Ardino and RC control
refused to work
C Programming
Microcontroller
Robotics
Arduino
B
Closed User
@bigboss001
•
7 years ago
5.0
$15.00 USD
Project 11458918 has been deleted
greatest freelancer ever and will work for him again thanku bro
G
Closed User
@gagan1172
•
7 years ago
5.0
$24.00 USD
Need help with transitional diagram and regular expressions
great guy to work with
Software Architecture
User Avatar
Flag of Mateen P.
@HeavenlyApps
•
7 years ago
5.0
₹1,750.00 INR
power electronics
The PERFECTIONIST. Executes well and delivers in time. Nice working with him.
Electrical Engineering
User Avatar
Flag of Shiva K.
@yadavk0934
•
7 years ago

Experience

Intern

Siemens AG
Jun 2016 - Jul 2016 (1 month, 1 day)
• Did Internship at Siemens (Pakistan) Engineering Co. Ltd particularly in the Digital Factory/Process Industries and Drives (DF/PD) and Energy Management Medium Voltage & Systems (EM MS) departments. • Familiarized with the company’s organizational structure and understood their working setup

Education

Bachelors of Science in Electrical Engineering

National University of Computer and Emerging Sciences, Pakistan 2012 - 2017
(5 years)

Qualifications

IEEE Week '16

IEEE
2016
Participated in "Azim Hayat Speed Soldering Competition",Successfully did routing and placement of components from provided circuit schematic and soldered the circuit in the given time frame!

IEEE Robotics and Automation Society - RAS NUCES Chapter

IEEE
2016
Attended Elementary Robotics Workshop and made Robot with following features: 1. Bluetooth control via smartphone 2. Embedded Control 3. Obstacle avoidance

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Certifications

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Top Skills

C Programming 1
Electronics 1
Matlab and Mathematica 1
Microcontroller 1
Software Architecture 1

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