An experimental MEMS device will operate at a high frequency, and the resistance of the device must be kept at 50 Ohms, even under activity. As shown in the schematic file (see attachment [login to view URL]), the MEMS device consists two IDTs (transducers). Each IDT has effectively R < 0.1 Ohms. The IDT image is in deviceBreakdown.jpg.
Requirement: Design the auxiliary circuit so that Req is 50 Ohms, plus or minus 5 Ohms.
Inputs: The inputs to IDT1 and IDT2 must have a sine signal with a frequency of 30-35 MHz and VPeak of 27 V (V max). Vpp (V peak to peak) is 56 V. Alternatively, it may have a higher voltage may be 33 VPeak and 66 Vpp. The total power dissipated is 1-1.6 W.
Complications: Due to high frequency, there is also potentially inductance L and capacitance C while the device is active.
How would you design the auxiliary circuit such that Req is 50 Ohms (+/- 5 Ohms) while the device is active?